single p - channel, - 12 v, - 3.5 a, power mosfet descriptions the is p - channel enhancement mos field effect transistor. uses advanced trench t echnology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc - dc conversion , p ower switch and charging circuit . standard product - features ? trench technology ? supper high density cell de sign ? e xcellent on resistance for higher dc current ? extremely low threshold voltage ? small package sot - 23 applications ? driver for relay, solenoid, motor, led etc. ? dc - dc converter circuit ? power switch ? load switch ? charging sot-23 pin c onfiguration (top view) w=w ill semi device code * = month (a~z) marking order i nformation device package shipping w pm - 3/tr sot - 23 3000 /reel&tape v ds (v) typical rds(on) ( ) - 12 0.031 @ v gs = C 4.5v 0.040 @ v gs = C 2.5v 0.056 @ v gs = C 1.8v w p m 1 4 8 3 w p m 1 4 8 3 w p m 1 4 8 3 = 1 4 8 3 8 3 w 8 3 - free. a n d h a l o g e n f r e e i s p b 1 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification preliminary
absolute maximum ratings thermal resistance ratings a surface mounted on fr - 4 board using 1 square inch pad size, 1oz copper b surface mounted on fr - 4 bo ard using minimum pad size, 1oz copper c pulse width <38 0s, duty cycle <2 % d maximum junction temperature t j =1 50 c . parameter symbol 10 s steady state unit drain - source voltage v ds - 12 v gate - source voltage v gs 8 continuous drain current a d t a =25c i d - 3. 5 - 3. 2 a t a =70c - 2.9 - 2. 5 maximum power dissipation a d t a =25c p d 0. 74 0. 57 w t a =70c 0. 47 0. 3 7 continuous drain current b t a =2 5c i d - 3. 4 - 2.9 a t a =70c - 2. 7 - 2. 3 maximum power dissipation b t a =25c p d 0. 67 0. 49 w t a =70c 0.4 3 0.3 1 pulsed drain current c i dm - 10 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg - 55 to 150 c parameter symbol typical maximum unit junction - to - ambient thermal resistance a t 10 s r ja 1 4 0 1 68 c/w steady state 1 80 216 junction - to - ambient thermal resistance b t 10 s r ja 1 5 5 1 86 steady state 212 2 54 junction - to - case thermal resistance steady state r jc 6 3 78 w p m 1 4 8 3 2 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification preliminary
electronics characteristics (ta=25 o c , unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain - to - source breakdown voltage b v dss v gs = 0 v, i d = - 250 u a - 12 v zero gate voltage drain current i dss v ds = - 1 0 v, v gs = 0v - 1 ua gate - t o - s ource leakage current i gss v ds = 0 v, v gs = 8 v 1 u a on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = - 2 5 0 u a - 0.45 - 0.55 - 0.85 v drain - t o - s ource on - r esistance b, c r ds(on) v gs = - 4 .5 v , i d = - 3.5 a 31 37 m? v gs = - 2 .5 v , i d = - 3.0 a 40 55 v gs = - 1.8v , i d = - 2.0 a 56 88 forward t rans conductance g fs v d s = - 5.0 v , i d = - 2.0 a 8.5 s capacitances , charges input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = - 1 0 v 1152 pf output capacitance c oss 253 reverse transfer capacitance c rss 236 total gate charge q g(tot) v gs = - 4.5 v, v d d = - 10 v, i d = - 3.5 a 14.6 nc threshold gate charge q g(th) 1.35 gate - to - source charge q gs 2.3 gate - to - drain charge q gd 5.7 switching characteristics turn - on delay time td(on) v gs = - 4.5 v, v d d = - 10 v, r l =3 ? , r g =6 ? 2 6 ns rise time tr 2 3 turn - off delay time td(off) 6 8 fall time tf 45 body diode characteristics forward voltage v sd v gs = 0 v, i s = - 1.0 a - 0.8 - 1.5 v w p m 1 4 8 3 3 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification preliminary
0.0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 v ds =-5v -i ds -drain to source current(a) -v gs -gate to source voltage(v) t=-50 c t=25 c t=125 c 2 4 6 8 10 30 40 50 60 70 80 r ds(on) - on-resistance(m) -i ds -drain-to-source current(a) v gs =-1.8v v gs =-2.5v v gs =-3.5v v gs =-4.5v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 30 60 90 120 150 r ds(on) - on-resistance(m) v gs -gate to source voltage(v) i d =-3.5a -50 0 50 100 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 normalized on-resistance temperature( c) v gs =-4.5v i d =-3.5a -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 normalized gate threshold voltage temperature ( o c) i d =-250ua 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 v gs =-1.5v v gs =-1.8v v gs =-2.5v v gs =-3.5v v gs =-4.5v -i ds -drain to source current (a) -v ds -drain to source voltage(v) typical characteristics (ta=25 o c, unless otherwise noted) output c haracteristics on - r esistance vs. d rain c urrent on - resistance vs. junction temperature transfer c haracteristics on - resistance vs. gate - to - source voltage threshold v oltage vs. temperature w p m 1 4 8 3 4 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification preliminary
0 2 4 6 8 10 200 400 600 800 1000 1200 1400 1600 1800 c-capacitance(pf) -v ds - drain to source voltage(v) ciss coss crss 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 -i sd -source to drain current (a) -v sd - source to drain voltage (v) t=25 c t=125 c 0 4 8 12 16 0 1 2 3 4 5 -v gs -gate voltage (v) qg(nc) v gs =-4.5v v ds =-10v i d =-3.5a 0.1 1 10 100 0.01 0.1 1 10 100 100us 1ms 10ms 100ms 1s 10s dc bvdss limit t a =25 c single pulse limit by r dson -i d - drain current (a) -v ds - drain source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 1e-3 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 power (w) pulse width (s) t j ( max =150c t a =25c capacitance single pulse power body diode forward voltage safe operating power gate charge characteristics w p m 1 4 8 3 5 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification preliminary
1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-4 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 normalized effective transient thermal impedance square wave pulse duration (sec) single pulse t ransient thermal r esponse (junction - to - ambient) p dm t 1 t 2 1. duty cycle, d=t 1 /t 2 2. per unit base = r ja = 180 c/w 3. t jm - t a = p dm r ja 4. surface mounted w p m 1 4 8 3 6 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification preliminary
package outline dimensions sot-23 min. max. min. max. a 0.900 1.150 0.035 0.045 a1 0.000 0.100 0.000 0.004 a2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 d 2.800 3.000 0.110 0.118 e 1.200 1.400 0.047 0.055 e1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 l l1 0.300 0.500 0.012 0.020 0 8 0 8 0.550 ref. 0.022 ref. symbol dimensions in inches dimensions in millimeters 0.950 typ. 0.037 typ. w p m 1 4 8 3 7 of 7 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification preliminary
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